Abstract: In this paper, a 1200 V, 100 A T-type full SiC power module is evaluated in a five-level T-type photovoltaic (PV) inverter. The T-type module is characterized with double pulse test, and ...
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Abstract: In this article, design and characterization of the deep-trench, U-shaped field-plate (DTUFP) edge-termination structure for 1200-V-class silicon carbide (SiC) devices are presented. A ...