Abstract: We present a systematic study on the design of a novel GaN/AlGaN/GaN super-heterojunction Schottky diode. Through physics-based TCAD simulation, we discuss three important design aspects: 1) ...
Abstract: The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in ...
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