Abstract: In this article, we propose a carbon nanotube (CNT) field-effect transistor (CNFET)-based static random access memory (SRAM) design at the 5-nm technology node that is optimized based on the ...
Abstract: Using 12nm FinFET technology, a model for a 6T SRAM cell was constructed. Cadence Virtuoso software is used to produce two bespoke layout bit cell designs. In terms of stability, read and ...
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