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Abstract: An accurate physics-based capacitance model is developed covering full-region operations of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances are ...
Abstract: The drain to gate capacitance (Miller capacitance) of SiC MOSFETs leads to the Miller effect during switching transients. The Miller capacitance in a phase-leg configuration causes the ...
† School of Electrical and Computer Engineering, University of Seoul, Seoul 130-743, Republic of Korea ‡ Department of Electronic Engineering, Sogang University, Seoul 121-742, Republic of Korea § ...
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