Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
Abstract: We experimentally confirmed that the steep subthreshold slope (SS) device “PN body-tied silicon-on-insulator (SOI) field-effect transistor” can reduce the short-circuit current of a ...
Abstract: Throughout the years, there has always been a tradeoff in digital design between three main variables which are power, performance and area. According to each application, the design would ...
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